In this paper, the minimization of the reverse recovery effects in the power diode as part of the effort to reduce the power loss in the circuit will be investigated. An inductive chopper circuit using CoolMOS power switch is set up to serve as the platform for investigation. This report will present how the variations of the parameters values in the inductive load chopper circuit will affect its reverse recovery characteristics. The parameters considered are the gate drive, duty ratio, CoolMOS switching frequency and operating temperature. PSPICE simulation using SPW11N60C2 (600V/11A) COOLMOS and IDP09E60 (600V/9A) power diode are provided to investigate the impact of each of these parameters towards the reverse recovery effects. The switching frequency affects the total energy loss, Eloss more significantly than the factors of temperature and gate resistance but less prominent than the duty ratio, D among all the four factors simulated for investigation in this report. © 2006 IEEE.