%T Analysis of Tunable Energy Band Gap of Graphene Layer
%A G. Witjaksono
%A M. Junaid
%I Institute of Electrical and Electronics Engineers Inc.
%O cited By 5; Conference of 7th IEEE International Conference on Photonics, ICP 2018 ; Conference Date: 9 April 2018 Through 11 April 2018; Conference Code:142491
%J 2018 IEEE 7th International Conference on Photonics, ICP 2018
%L scholars9727
%D 2018
%R 10.1109/ICP.2018.8533209
%K Binding energy; Electric excitation; Electric fields; Electronic properties; Energy gap; Hamiltonians; Photonics, Band-gap tuning; Bilayer Graphene; Energy bandgaps; Graphene layers; Hamiltonian matrix; Self energy; Tight binding model; Tunable energy, Graphene
%X The electronic properties of the single and bilayer graphene have been carefully investigated by the principle of Hamiltonian tight binding model. We find that the energy band gap of bilayer graphene is tunable from 0 to 0.29 eV under the applied electric field. Using the energy band gap analysis from Hamiltonian tight-binding simulations, we also concluded that the charge distribution in inter and intra-graphene layer determine the energy band gap structure. Based on the applied mechanism, the bandgap of bilayer graphene can be engineered under DC and low amplitude electric med potential for the optical excitation. © 2018 IEEE.