%O cited By 3; Conference of 2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010 ; Conference Date: 15 June 2010 Through 17 June 2010; Conference Code:84196
%T Modeling and characterization of electrostatically actuated CMOS-MEMS resonator for magnetic field sensing
%C Kuala Lumpur
%D 2010
%R 10.1109/ICIAS.2010.5716208
%J 2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010
%X In this paper a new structure of electrostatically actuated clamped-clamped micro beam resonator is designed, modeled and simulated using aluminum as structural material to measure static to low frequency magnetic fields. The device is designed and simulated using CoventorWare simulation software to get mechanical properties using a static and dynamic displacement analysis and to get the optimum values of the beams parameters. The design is based on CMOS technology and surface micromachining. The resonant frequency increases with decreasing length, width and thickness of the micro beam resonator while the quality factor does not change with the change in the dimension of the resonator.
%L scholars968
%A F. Ahmad
%A J.O. Dennis
%A N.H. Hamid
%K CMOS technology; CMOS-MEMS; CoventorWare; Electrostatic actuation; Low frequency magnetic fields; Magnetic field sensing; MEMS Resonator; Micro beams; New structures; Optimum value; Quality factors; Resonant frequencies; Simulation software; Static and dynamic; Structural materials, CMOS integrated circuits; Computer software; Crystal resonators; Dynamic analysis; Dynamic mechanical analysis; Electrostatic actuators; Electrostatics; Lorentz force; Magnetic sensors; Mechanical properties; Microelectromechanical devices; Micromachining; Natural frequencies, Magnetic field effects