eprintid: 9647
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/96/47
datestamp: 2023-11-09 16:36:17
lastmod: 2023-11-09 16:36:17
status_changed: 2023-11-09 16:29:29
type: conference_item
metadata_visibility: show
creators_name: Aslam, M.Z.
creators_name: Jeoti, V.
creators_name: Karuppanan, S.
creators_name: Malik, A.F.
title: FEM Simulation Analysis of AlN/SiO 2 /Si Multilayer Structure and Effect of IDT Configuration on SAW Propagation Modes and Characteristics
ispublished: pub
keywords: Acoustic surface wave devices; Acoustic wave propagation; Acoustic waves; Aluminum nitride; CMOS integrated circuits; Film preparation; III-V semiconductors; Sawing; Silica; Silicon oxides, Aluminum nitride (AlN); Finite element method simulation; High frequency HF; Integrated sensing; Multilayer structures; Piezoelectric thin films; Propagation characteristics; Surface acoustic wave (SAW), Finite element method
note: cited By 1; Conference of 7th International Conference on Intelligent and Advanced System, ICIAS 2018 ; Conference Date: 13 August 2018 Through 14 August 2018; Conference Code:143005
abstract: In this paper, Finite Element Method (FEM) simulation analysis of a CMOS compatible AlN/SiO 2/ Si SAW device is performed to investigate the Surface Acoustic Wave (SAW) modes and their propagation characteristics. A SAW resonator was simulated based on piezoelectric thin film of Aluminum Nitride (AlN) on passivated silicon (SiO 2 /Si) substrate. The SAW properties of AlN film on SiO 2 /Si were analyzed with two composite structures: (IDT)/AlN/SiO 2 /Si and AlN/(IDT)/SiO 2 /Si, and they revealed some good SAW properties. The maximum value of k 2 is almost same for both SAW modes with both IDT configurations, but on different values of tAlNλ and tSiO 2 λ. The results stipulate a theoretical basis for further application on high frequency SAW devices. The proposed SAW device based on AlN/SiO 2 /Si structure have potential applications in integrated sensing applications. © 2018 IEEE.
date: 2018
publisher: Institute of Electrical and Electronics Engineers Inc.
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85059769600&doi=10.1109%2fICIAS.2018.8540581&partnerID=40&md5=21000993153f44d8495169d4b42725a2
id_number: 10.1109/ICIAS.2018.8540581
full_text_status: none
publication: International Conference on Intelligent and Advanced System, ICIAS 2018
refereed: TRUE
isbn: 9781538672693
citation:   Aslam, M.Z. and Jeoti, V. and Karuppanan, S. and Malik, A.F.  (2018) FEM Simulation Analysis of AlN/SiO 2 /Si Multilayer Structure and Effect of IDT Configuration on SAW Propagation Modes and Characteristics.  In: UNSPECIFIED.