TY  - CONF
AV  - none
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85059769600&doi=10.1109%2fICIAS.2018.8540581&partnerID=40&md5=21000993153f44d8495169d4b42725a2
PB  - Institute of Electrical and Electronics Engineers Inc.
N2  - In this paper, Finite Element Method (FEM) simulation analysis of a CMOS compatible AlN/SiO 2/ Si SAW device is performed to investigate the Surface Acoustic Wave (SAW) modes and their propagation characteristics. A SAW resonator was simulated based on piezoelectric thin film of Aluminum Nitride (AlN) on passivated silicon (SiO 2 /Si) substrate. The SAW properties of AlN film on SiO 2 /Si were analyzed with two composite structures: (IDT)/AlN/SiO 2 /Si and AlN/(IDT)/SiO 2 /Si, and they revealed some good SAW properties. The maximum value of k 2 is almost same for both SAW modes with both IDT configurations, but on different values of tAlNλ and tSiO 2 λ. The results stipulate a theoretical basis for further application on high frequency SAW devices. The proposed SAW device based on AlN/SiO 2 /Si structure have potential applications in integrated sensing applications. © 2018 IEEE.
KW  - Acoustic surface wave devices; Acoustic wave propagation; Acoustic waves; Aluminum nitride; CMOS integrated circuits; Film preparation; III-V semiconductors; Sawing; Silica; Silicon oxides
KW  -  Aluminum nitride (AlN); Finite element method simulation; High frequency HF; Integrated sensing; Multilayer structures; Piezoelectric thin films; Propagation characteristics; Surface acoustic wave (SAW)
KW  -  Finite element method
N1  - cited By 1; Conference of 7th International Conference on Intelligent and Advanced System, ICIAS 2018 ; Conference Date: 13 August 2018 Through 14 August 2018; Conference Code:143005
A1  - Aslam, M.Z.
A1  - Jeoti, V.
A1  - Karuppanan, S.
A1  - Malik, A.F.
Y1  - 2018///
TI  - FEM Simulation Analysis of AlN/SiO 2 /Si Multilayer Structure and Effect of IDT Configuration on SAW Propagation Modes and Characteristics
SN  - 9781538672693
ID  - scholars9647
ER  -