%0 Conference Paper
%A Aslam, M.Z.
%A Jeoti, V.
%A Karuppanan, S.
%A Malik, A.F.
%D 2018
%F scholars:9647
%I Institute of Electrical and Electronics Engineers Inc.
%K Acoustic surface wave devices; Acoustic wave propagation; Acoustic waves; Aluminum nitride; CMOS integrated circuits; Film preparation; III-V semiconductors; Sawing; Silica; Silicon oxides, Aluminum nitride (AlN); Finite element method simulation; High frequency HF; Integrated sensing; Multilayer structures; Piezoelectric thin films; Propagation characteristics; Surface acoustic wave (SAW), Finite element method
%R 10.1109/ICIAS.2018.8540581
%T FEM Simulation Analysis of AlN/SiO 2 /Si Multilayer Structure and Effect of IDT Configuration on SAW Propagation Modes and Characteristics
%U https://khub.utp.edu.my/scholars/9647/
%X In this paper, Finite Element Method (FEM) simulation analysis of a CMOS compatible AlN/SiO 2/ Si SAW device is performed to investigate the Surface Acoustic Wave (SAW) modes and their propagation characteristics. A SAW resonator was simulated based on piezoelectric thin film of Aluminum Nitride (AlN) on passivated silicon (SiO 2 /Si) substrate. The SAW properties of AlN film on SiO 2 /Si were analyzed with two composite structures: (IDT)/AlN/SiO 2 /Si and AlN/(IDT)/SiO 2 /Si, and they revealed some good SAW properties. The maximum value of k 2 is almost same for both SAW modes with both IDT configurations, but on different values of tAlNλ and tSiO 2 λ. The results stipulate a theoretical basis for further application on high frequency SAW devices. The proposed SAW device based on AlN/SiO 2 /Si structure have potential applications in integrated sensing applications. © 2018 IEEE.
%Z cited By 1; Conference of 7th International Conference on Intelligent and Advanced System, ICIAS 2018 ; Conference Date: 13 August 2018 Through 14 August 2018; Conference Code:143005