relation: https://khub.utp.edu.my/scholars/9647/
title: FEM Simulation Analysis of AlN/SiO 2 /Si Multilayer Structure and Effect of IDT Configuration on SAW Propagation Modes and Characteristics
creator: Aslam, M.Z.
creator: Jeoti, V.
creator: Karuppanan, S.
creator: Malik, A.F.
description: In this paper, Finite Element Method (FEM) simulation analysis of a CMOS compatible AlN/SiO 2/ Si SAW device is performed to investigate the Surface Acoustic Wave (SAW) modes and their propagation characteristics. A SAW resonator was simulated based on piezoelectric thin film of Aluminum Nitride (AlN) on passivated silicon (SiO 2 /Si) substrate. The SAW properties of AlN film on SiO 2 /Si were analyzed with two composite structures: (IDT)/AlN/SiO 2 /Si and AlN/(IDT)/SiO 2 /Si, and they revealed some good SAW properties. The maximum value of k 2 is almost same for both SAW modes with both IDT configurations, but on different values of tAlNλ and tSiO 2 λ. The results stipulate a theoretical basis for further application on high frequency SAW devices. The proposed SAW device based on AlN/SiO 2 /Si structure have potential applications in integrated sensing applications. © 2018 IEEE.
publisher: Institute of Electrical and Electronics Engineers Inc.
date: 2018
type: Conference or Workshop Item
type: PeerReviewed
identifier:   Aslam, M.Z. and Jeoti, V. and Karuppanan, S. and Malik, A.F.  (2018) FEM Simulation Analysis of AlN/SiO 2 /Si Multilayer Structure and Effect of IDT Configuration on SAW Propagation Modes and Characteristics.  In: UNSPECIFIED.     
relation: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85059769600&doi=10.1109%2fICIAS.2018.8540581&partnerID=40&md5=21000993153f44d8495169d4b42725a2
relation: 10.1109/ICIAS.2018.8540581
identifier: 10.1109/ICIAS.2018.8540581