eprintid: 9511
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/95/11
datestamp: 2023-11-09 16:36:09
lastmod: 2023-11-09 16:36:09
status_changed: 2023-11-09 16:29:10
type: article
metadata_visibility: show
creators_name: Kannan, R.
creators_name: Khalid, H.
creators_name: Indragandhi, V.
creators_name: Albert Alexander, S.
title: Threshold voltage and drain current investigation of power MOSFET ZVN3320FTA by 2D simulations
ispublished: pub
note: cited By 1
abstract: Power electronic devices used in space shuttles experience degradation due to their sensitivity towards surrounding radiations. Generally, Metal-Oxide Semiconductor Field Effect Transistors (MOSFET) are used in these devices because of their fast switching speed and low power consumption capabilities. Ionizing radiation causes induced charge to build-up which damages the electrical characteristics of the MOSFET. This study investigates the threshold voltage shifts and drain current degradation for N-channel power MOSFET ZVN3320FTA by simulating experimental data on COMSOL Multiphysics. Total Ionization Dose (TID) degrade the oxide layer of MOSFETs by inducing interface-trap and oxide-trap charges. Generation of these excessive electron-hole pairs eventually causes threshold voltage shifts and current degradation. © 2018, UK Simulation Society. All rights reserved.
date: 2018
publisher: UK Simulation Society
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062753614&doi=10.5013%2fIJSSST.a.19.06.39&partnerID=40&md5=a8466ab52b56ad5a4869c1bdeaa4a917
id_number: 10.5013/IJSSST.a.19.06.39
full_text_status: none
publication: International Journal of Simulation: Systems, Science and Technology
volume: 19
number: 6
pagerange: 39.1-39.6
refereed: TRUE
issn: 14738031
citation:   Kannan, R. and Khalid, H. and Indragandhi, V. and Albert Alexander, S.  (2018) Threshold voltage and drain current investigation of power MOSFET ZVN3320FTA by 2D simulations.  International Journal of Simulation: Systems, Science and Technology, 19 (6).  39.1-39.6.  ISSN 14738031