TY  - JOUR
JF  - International Journal of Simulation: Systems, Science and Technology
VL  - 19
Y1  - 2018///
N1  - cited By 1
A1  - Kannan, R.
A1  - Khalid, H.
A1  - Indragandhi, V.
A1  - Albert Alexander, S.
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062753614&doi=10.5013%2fIJSSST.a.19.06.39&partnerID=40&md5=a8466ab52b56ad5a4869c1bdeaa4a917
AV  - none
PB  - UK Simulation Society
SP  - 39.1
TI  - Threshold voltage and drain current investigation of power MOSFET ZVN3320FTA by 2D simulations
IS  - 6
SN  - 14738031
N2  - Power electronic devices used in space shuttles experience degradation due to their sensitivity towards surrounding radiations. Generally, Metal-Oxide Semiconductor Field Effect Transistors (MOSFET) are used in these devices because of their fast switching speed and low power consumption capabilities. Ionizing radiation causes induced charge to build-up which damages the electrical characteristics of the MOSFET. This study investigates the threshold voltage shifts and drain current degradation for N-channel power MOSFET ZVN3320FTA by simulating experimental data on COMSOL Multiphysics. Total Ionization Dose (TID) degrade the oxide layer of MOSFETs by inducing interface-trap and oxide-trap charges. Generation of these excessive electron-hole pairs eventually causes threshold voltage shifts and current degradation. © 2018, UK Simulation Society. All rights reserved.
EP  - 39.6
ID  - scholars9511
ER  -