%0 Journal Article
%@ 14738031
%A Kannan, R.
%A Khalid, H.
%A Indragandhi, V.
%A Albert Alexander, S.
%D 2018
%F scholars:9511
%I UK Simulation Society
%J International Journal of Simulation: Systems, Science and Technology
%N 6
%P 39.1-39.6
%R 10.5013/IJSSST.a.19.06.39
%T Threshold voltage and drain current investigation of power MOSFET ZVN3320FTA by 2D simulations
%U https://khub.utp.edu.my/scholars/9511/
%V 19
%X Power electronic devices used in space shuttles experience degradation due to their sensitivity towards surrounding radiations. Generally, Metal-Oxide Semiconductor Field Effect Transistors (MOSFET) are used in these devices because of their fast switching speed and low power consumption capabilities. Ionizing radiation causes induced charge to build-up which damages the electrical characteristics of the MOSFET. This study investigates the threshold voltage shifts and drain current degradation for N-channel power MOSFET ZVN3320FTA by simulating experimental data on COMSOL Multiphysics. Total Ionization Dose (TID) degrade the oxide layer of MOSFETs by inducing interface-trap and oxide-trap charges. Generation of these excessive electron-hole pairs eventually causes threshold voltage shifts and current degradation. © 2018, UK Simulation Society. All rights reserved.
%Z cited By 1