@article{scholars9511,
            year = {2018},
         journal = {International Journal of Simulation: Systems, Science and Technology},
       publisher = {UK Simulation Society},
           pages = {39.1--39.6},
          volume = {19},
            note = {cited By 1},
          number = {6},
             doi = {10.5013/IJSSST.a.19.06.39},
           title = {Threshold voltage and drain current investigation of power MOSFET ZVN3320FTA by 2D simulations},
            issn = {14738031},
          author = {Kannan, R. and Khalid, H. and Indragandhi, V. and Albert Alexander, S.},
        abstract = {Power electronic devices used in space shuttles experience degradation due to their sensitivity towards surrounding radiations. Generally, Metal-Oxide Semiconductor Field Effect Transistors (MOSFET) are used in these devices because of their fast switching speed and low power consumption capabilities. Ionizing radiation causes induced charge to build-up which damages the electrical characteristics of the MOSFET. This study investigates the threshold voltage shifts and drain current degradation for N-channel power MOSFET ZVN3320FTA by simulating experimental data on COMSOL Multiphysics. Total Ionization Dose (TID) degrade the oxide layer of MOSFETs by inducing interface-trap and oxide-trap charges. Generation of these excessive electron-hole pairs eventually causes threshold voltage shifts and current degradation. {\^A}{\copyright} 2018, UK Simulation Society. All rights reserved.},
             url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062753614&doi=10.5013\%2fIJSSST.a.19.06.39&partnerID=40&md5=a8466ab52b56ad5a4869c1bdeaa4a917}
}