eprintid: 925
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/09/25
datestamp: 2023-11-09 15:49:04
lastmod: 2023-11-09 15:49:04
status_changed: 2023-11-09 15:38:43
type: conference_item
metadata_visibility: show
creators_name: Minghao, K.
creators_name: Ellis, G.A.
creators_name: Soon, T.C.
title: Effects of output low impedance termination to linearity of GaAs HBT power amplifier
ispublished: pub
keywords: Broad bands; Capacitor network; Distributed amplifier; GaAs HBT; In-band; Intercept points; Low impedance; NO reduction; Return loss; RF design; Series inductor; Third order, Bipolar transistors; Broadband amplifiers; Gallium alloys; Gallium arsenide; Heterojunction bipolar transistors; Heterojunctions; Microwave integrated circuits; Power amplifiers; Semiconducting gallium, Monolithic microwave integrated circuits
note: cited By 2; Conference of 2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010 ; Conference Date: 15 June 2010 Through 17 June 2010; Conference Code:84196
abstract: Improving linearity over a broad band is a major goal in RF design. This paper demonstrates that adding a low impedance termination at the envelope frequency (�2-�1) to the output of a Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) Distributed Amplifier (DA) improves the third order output intercept point (OIP3) over a bandwidth of 2.5 GHz to 3 GHz by 1.6 to 3.4 dB. The low impedance termination is easily implemented using an external series inductor-capacitor network (LC trap) to the Monolithic Microwave Integrated Circuit (MMIC) DA. The addition of the trap causes no reduction to the in-band gain, return loss and P1dB.
date: 2010
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-79952760328&doi=10.1109%2fICIAS.2010.5716258&partnerID=40&md5=59bae1d3882849608119fabab9e10833
id_number: 10.1109/ICIAS.2010.5716258
full_text_status: none
publication: 2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010
place_of_pub: Kuala Lumpur
refereed: TRUE
isbn: 9781424466238
citation:   Minghao, K. and Ellis, G.A. and Soon, T.C.  (2010) Effects of output low impedance termination to linearity of GaAs HBT power amplifier.  In: UNSPECIFIED.