%X Improving linearity over a broad band is a major goal in RF design. This paper demonstrates that adding a low impedance termination at the envelope frequency (�2-�1) to the output of a Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) Distributed Amplifier (DA) improves the third order output intercept point (OIP3) over a bandwidth of 2.5 GHz to 3 GHz by 1.6 to 3.4 dB. The low impedance termination is easily implemented using an external series inductor-capacitor network (LC trap) to the Monolithic Microwave Integrated Circuit (MMIC) DA. The addition of the trap causes no reduction to the in-band gain, return loss and P1dB.
%K Broad bands; Capacitor network; Distributed amplifier; GaAs HBT; In-band; Intercept points; Low impedance; NO reduction; Return loss; RF design; Series inductor; Third order, Bipolar transistors; Broadband amplifiers; Gallium alloys; Gallium arsenide; Heterojunction bipolar transistors; Heterojunctions; Microwave integrated circuits; Power amplifiers; Semiconducting gallium, Monolithic microwave integrated circuits
%D 2010
%R 10.1109/ICIAS.2010.5716258
%O cited By 2; Conference of 2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010 ; Conference Date: 15 June 2010 Through 17 June 2010; Conference Code:84196
%L scholars925
%J 2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010
%C Kuala Lumpur
%T Effects of output low impedance termination to linearity of GaAs HBT power amplifier
%A K. Minghao
%A G.A. Ellis
%A T.C. Soon