TY  - CONF
AV  - none
CY  - Kuala Lumpur
KW  - Broad bands; Capacitor network; Distributed amplifier; GaAs HBT; In-band; Intercept points; Low impedance; NO reduction; Return loss; RF design; Series inductor; Third order
KW  -  Bipolar transistors; Broadband amplifiers; Gallium alloys; Gallium arsenide; Heterojunction bipolar transistors; Heterojunctions; Microwave integrated circuits; Power amplifiers; Semiconducting gallium
KW  -  Monolithic microwave integrated circuits
ID  - scholars925
TI  - Effects of output low impedance termination to linearity of GaAs HBT power amplifier
N1  - cited By 2; Conference of 2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010 ; Conference Date: 15 June 2010 Through 17 June 2010; Conference Code:84196
N2  - Improving linearity over a broad band is a major goal in RF design. This paper demonstrates that adding a low impedance termination at the envelope frequency (Ï?2-Ï?1) to the output of a Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) Distributed Amplifier (DA) improves the third order output intercept point (OIP3) over a bandwidth of 2.5 GHz to 3 GHz by 1.6 to 3.4 dB. The low impedance termination is easily implemented using an external series inductor-capacitor network (LC trap) to the Monolithic Microwave Integrated Circuit (MMIC) DA. The addition of the trap causes no reduction to the in-band gain, return loss and P1dB.
SN  - 9781424466238
Y1  - 2010///
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-79952760328&doi=10.1109%2fICIAS.2010.5716258&partnerID=40&md5=59bae1d3882849608119fabab9e10833
A1  - Minghao, K.
A1  - Ellis, G.A.
A1  - Soon, T.C.
ER  -