<> "The repository administrator has not yet configured an RDF license."^^ . <> . . . "Effects of output low impedance termination to linearity of GaAs HBT power amplifier"^^ . "Improving linearity over a broad band is a major goal in RF design. This paper demonstrates that adding a low impedance termination at the envelope frequency (�2-�1) to the output of a Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) Distributed Amplifier (DA) improves the third order output intercept point (OIP3) over a bandwidth of 2.5 GHz to 3 GHz by 1.6 to 3.4 dB. The low impedance termination is easily implemented using an external series inductor-capacitor network (LC trap) to the Monolithic Microwave Integrated Circuit (MMIC) DA. The addition of the trap causes no reduction to the in-band gain, return loss and P1dB."^^ . "2010" . . . "2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010"^^ . . . . . . . . . . . . . . "K."^^ . "Minghao"^^ . "K. Minghao"^^ . . "T.C."^^ . "Soon"^^ . "T.C. Soon"^^ . . "G.A."^^ . "Ellis"^^ . "G.A. Ellis"^^ . . . . . "HTML Summary of #925 \n\nEffects of output low impedance termination to linearity of GaAs HBT power amplifier\n\n" . "text/html" . .