relation: https://khub.utp.edu.my/scholars/925/
title: Effects of output low impedance termination to linearity of GaAs HBT power amplifier
creator: Minghao, K.
creator: Ellis, G.A.
creator: Soon, T.C.
description: Improving linearity over a broad band is a major goal in RF design. This paper demonstrates that adding a low impedance termination at the envelope frequency (�2-�1) to the output of a Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) Distributed Amplifier (DA) improves the third order output intercept point (OIP3) over a bandwidth of 2.5 GHz to 3 GHz by 1.6 to 3.4 dB. The low impedance termination is easily implemented using an external series inductor-capacitor network (LC trap) to the Monolithic Microwave Integrated Circuit (MMIC) DA. The addition of the trap causes no reduction to the in-band gain, return loss and P1dB.
date: 2010
type: Conference or Workshop Item
type: PeerReviewed
identifier:   Minghao, K. and Ellis, G.A. and Soon, T.C.  (2010) Effects of output low impedance termination to linearity of GaAs HBT power amplifier.  In: UNSPECIFIED.     
relation: https://www.scopus.com/inward/record.uri?eid=2-s2.0-79952760328&doi=10.1109%2fICIAS.2010.5716258&partnerID=40&md5=59bae1d3882849608119fabab9e10833
relation: 10.1109/ICIAS.2010.5716258
identifier: 10.1109/ICIAS.2010.5716258