%T CMOS-MEMS resonator parametric variation analysis through equivalent circuit modeling
%A M.U. Mian
%A J.O. Dennis
%A M.H.M. Khir
%A N.Y. Sutri
%A A.Y. Ahmed
%A T.B. Tang
%I Institute of Electrical and Electronics Engineers Inc.
%K Circuit simulation; Circuit theory; CMOS integrated circuits; Fabrication; Fits and tolerances; Foundries; MEMS; Microelectromechanical devices; Natural frequencies; Parametric devices; Resonators; Timing circuits, Equivalent circuit model; External magnetic field; Fabrication tolerances; Micro electromechanical system (MEMS); Operational frequency; Parametric variation; Theoretical formulation; Tolerance range, Equivalent circuits
%X In this paper, we report a micro electro mechanical system (MEMS) shuttle resonator fabricated on CMOS-MEMS wafer technique. The resonator operates at the resonant frequency when a current flows through the metal layers in the presence of an external magnetic field. We investigate the resonant frequency and amplitude shifts due to parametric variation in beam length, width, and structure thickness in resonator motion. The theoretical formulation of the equivalent circuit model is presented. Simulation of resonator with variations are carried out using equivalent circuit model, these variations are based on fabrication foundry tolerance range. Simulation results show a range of operational frequencies in which the resonator can perform under the fabrication tolerances provided by the foundry. © 2016 IEEE.
%D 2017
%R 10.1109/ICIAS.2016.7824056
%O cited By 0; Conference of 6th International Conference on Intelligent and Advanced Systems, ICIAS 2016 ; Conference Date: 15 August 2016 Through 17 August 2016; Conference Code:125970
%L scholars8911
%J International Conference on Intelligent and Advanced Systems, ICIAS 2016