@inproceedings{scholars8908,
            note = {cited By 1; Conference of 6th International Conference on Intelligent and Advanced Systems, ICIAS 2016 ; Conference Date: 15 August 2016 Through 17 August 2016; Conference Code:125970},
            year = {2017},
             doi = {10.1109/ICIAS.2016.7824107},
         journal = {International Conference on Intelligent and Advanced Systems, ICIAS 2016},
       publisher = {Institute of Electrical and Electronics Engineers Inc.},
           title = {Performance comparison of one \&two quantum wells light emitting diodes simulated with COMSOL multiphysics},
          author = {Kumar, P. and Saheed, M. S. B. M. and Burhanudin, Z. A.},
            isbn = {9781509008452},
             url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85012034997&doi=10.1109\%2fICIAS.2016.7824107&partnerID=40&md5=4dcfec88a71e882f1f1c34727d4415a5},
        keywords = {Aluminum gallium nitride; Diodes; III-V semiconductors; Light emitting diodes; Neutron emission, Comparing devices; Comsol multiphysics; High-efficiency; InGaN; Light emitting diode (LED); Optical parameter; Performance comparison; Turn-on voltages, Semiconductor quantum wells},
        abstract = {Light-emitting diodes are employed in numerous applications such as, displaying information, communications, sensing, illumination and lighting. In this paper, AlGaN/InGaN based two quantum wells (2QWs) light emitting diode (LED) is modeled and studied numerically using COMSOL Multiphysics. The electrical, electronic and optical parameters are extracted from the device. The performance of 2QWs LED is investigated by comparing device behavior with respect to available one quantum well (1QW) light emitting diode model. Very close turn-on voltage values are achieved for both LED models. A non-uniform emission is also found from 2QWsLED model along with high efficiency drooping. {\^A}{\copyright} 2016 IEEE.}
}