TY  - CONF
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046361410&doi=10.1109%2fPRIMEASIA.2017.8280361&partnerID=40&md5=e5d5b0fa7c33dfecbc4196bcda3e4416
A1  - Basuwaqi, A.M.
A1  - Md Khir, M.H.
A1  - Ahmed, A.Y.
A1  - Rabih, A.A.S.
A1  - Mian, M.U.
A1  - Dennis, J.O.
VL  - 2017-O
EP  - 52
Y1  - 2017///
SN  - 21592144
PB  - IEEE Computer Society
N1  - cited By 2; Conference of 2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2017 ; Conference Date: 31 October 2017 Through 2 November 2017; Conference Code:134541
N2  - This research work focuses on performance analysis of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device which has been designed and fabricated for humidity sensing purpose. The sensor was designed following the standard 0.35 μm CMOS technology. The device is working using electrothermal principle. Alternative current is supplied to its embedded heater which results in moving the thin film. The sensing principle is based on the change in amplitude of the device due to adsorption or absorption of humidity on the active material layer of titanium dioxide (TiO2) nanoparticles deposited on the moving plate, which results in changing the mass of the device. Although the sensor showed a response to the increase and decrease of humidity, its output signal was nonlinear. To investigate the factors that lead to nonlinear output, the sensor has to be investigated before it is deposited to determine the base output of the sensor. In this paper, the device was tested at low frequency range of 1 Hz to 5 Hz, and the applied voltage was in range of 1 Vrms to 4 Vrms. Wheatstone quarter and half bridge configurations were used to carry out the experimental process. It is observed that the best linear output of the device was achieved at 3 Vrms and 3.5 Vrms. Furthermore, the linearity has improved using Wheatstone half bridge configuration by 6.6 and 11.14 at 3 Vrms and at 3.5 Vrms, respectively. © 2017 IEEE.
KW  - Bridge circuits; CMOS integrated circuits; Electromechanical devices; Humidity sensors; Metals; MOS devices; Oxide semiconductors; Titanium dioxide
KW  -  Applied frequency; Applied voltages; Bridge configuration; Complementary metal oxide semiconductor-microelectromechanical system; Complementary metal oxide semiconductors; Half-bridge; Linearity; Performances analysis; Wheatstone; Wheatstone's bridge
KW  -  MEMS
TI  - Effects of frequency and voltage on the output of CMOS-MEMS device
ID  - scholars8538
SP  - 49
AV  - none
ER  -