%P 121-124
%T Switching power control for multimode multiband power amplifier
%I IEEE Computer Society
%V 2017-O
%A V. Thangasamy
%A N.A. Kamsani
%A T.Z.A. Zulkifli
%O cited By 0; Conference of 2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2017 ; Conference Date: 31 October 2017 Through 2 November 2017; Conference Code:134541
%J Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics
%L scholars8537
%D 2017
%R 10.1109/PRIMEASIA.2017.8280379
%K Long Term Evolution (LTE); Power control, Consumer demands; Industry standards; Long term evolution; Long-term evolution; Multi band; Multimodes; Power added efficiency; Power-added-efficiency; Switching power control; Wireless devices, Power amplifiers
%X Driven by ever-increasing consumer demand for wireless devices capable of supporting multiple air standards and applications, the implementation of multimode multiband (MMMB) power amplifier (PA) has been steadily increasing. This paper presents a design of a MMMB PA based on an industry-standard 130nm CMOS process technology, capable of operating in three power modes and in three different bands. Multiple gated transistor technique (MTGR) has been designed whereby the output power from the PA is controlled by external switching control voltage. Series combining transformer has been to adopted to achieve higher output power. The PA has 300MHz bandwidth starting from the frequency of 1.7GHz up to 2.0GHz, covering the LTE bands 1, 2 and 3, with output saturated power of 33dBm. © 2017 IEEE.