eprintid: 8292
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/82/92
datestamp: 2023-11-09 16:20:11
lastmod: 2023-11-09 16:20:11
status_changed: 2023-11-09 16:12:17
type: conference_item
metadata_visibility: show
creators_name: Ahmed, A.Y.
creators_name: Rabih, A.A.S.
creators_name: Khir, M.H.M.
creators_name: Basuwaqi, A.M.A.
creators_name: Dennis, J.O.
title: Theoretical modeling and FEA simulation of a CMOS-MEMS resonator
ispublished: pub
keywords: Computer software; Finite element method; Humidity sensors; Microelectromechanical devices; Nanoelectronics; Natural frequencies; Resonance; Resonators, Analytical results; CMOS technology; CMOS-MEMS; Humidity sensing; Mass sensitivity; Percentage error; Resonance frequencies; Theoretical modeling, CMOS integrated circuits
note: cited By 1; Conference of 11th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017 ; Conference Date: 23 August 2017 Through 25 August 2017; Conference Code:131360
abstract: Relative humidity sensing is crucial in many applications. However, hysteresis, lack of stability and low accuracy still exist in some of the available humidity sensors. This paper studies the effect of changing the supported beams' length and width on the resonance frequency and mass sensitivity of a CMOS-MEMS resonator proposed for relative humidity sensing applications. The resonator is designed based on 0.35 μm CMOS technology. The resonance frequency and mass sensitivity were found to be in a range of 6.195 kHz-17.852 kHz and 1.498 mHz/pg-4.301 mHz/pg, respectively, when the length of the beams was changed from 500 μm to 300 μm, while decreasing the beams' width was found to decrease the resonance frequency and subsequently the mass sensitivity. FEA simulation using 2008 CoventorWare software was used to confirm the analytical results, in which the analytical and simulation results of frequencies and mass sensitivities showed good agreement within a percentage error of 0.80  for both of them. © 2017 IEEE.
date: 2017
publisher: Institute of Electrical and Electronics Engineers Inc.
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85039941971&doi=10.1109%2fRSM.2017.8069110&partnerID=40&md5=802b8843825be9683c8ec5731c35d9a1
id_number: 10.1109/RSM.2017.8069110
full_text_status: none
publication: Proceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017
pagerange: 62-66
refereed: TRUE
isbn: 9781509040285
citation:   Ahmed, A.Y. and Rabih, A.A.S. and Khir, M.H.M. and Basuwaqi, A.M.A. and Dennis, J.O.  (2017) Theoretical modeling and FEA simulation of a CMOS-MEMS resonator.  In: UNSPECIFIED.