%T DC magnetron sputtered TiO2 thin film as efficient hole blocking layer for perovskite solar cell
%I Institute of Electrical and Electronics Engineers Inc.
%A M.S.M. Saheed
%A N.M. Mohamed
%A B.S.M. Singh
%A V. Perumal
%A M.S.M. Saheed
%P 46-49
%X The ultra-thin film of metal oxide were fabricated via DC-magnetron sputtering to acts as the hole blocking layer. The traditional dye absorption material were replaced by the fourth generation light harvesting material, the CH3NH3PbI3 which deemed to reach the PV efficiency limit. The complete conversion of PbI2 into CH3NH3PbI3 crystal structure vital in lowering the internal series resistance. With this new light harvesting material were used able to achieve 7.75 efficiency via sequential two step deposition of perovskite. © 2017 IEEE.
%K Crystal structure; Efficiency; Electric resistance; Lead compounds; Magnetron sputtering; Metals; Nanoelectronics; Perovskite; Perovskite solar cells; Reactive sputtering; Solar cells; Titanium compounds; Titanium dioxide; Ultrathin films, Dc magnetron sputtering; Fourth generation; Hole blocking layers; Light-harvesting; Series resistances; TiO2 thin films; Traditional dyes; Two step depositions, Thin films
%D 2017
%R 10.1109/RSM.2017.8069148
%O cited By 1; Conference of 11th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017 ; Conference Date: 23 August 2017 Through 25 August 2017; Conference Code:131360
%L scholars8290
%J Proceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017