eprintid: 820
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/08/20
datestamp: 2023-11-09 15:48:58
lastmod: 2023-11-09 15:48:58
status_changed: 2023-11-09 15:38:33
type: conference_item
metadata_visibility: show
creators_name: Koh, M.
creators_name: Ellis, G.A.
creators_name: Teoh, C.S.
title: Broadband linearization of InGaP/GaAs HBT power amplifier
ispublished: pub
keywords: Capacitive reactance; Distributed amplifier; Frequency spacing; High linearity; InGaP/GaAs HBT; Intercept points; Low impedance; Return loss; RF amplifiers; Short circuit; Simulation and measurement; Third order, Bipolar transistors; Frequency bands; Gallium; Gallium alloys; Gallium arsenide; Heterojunction bipolar transistors; Heterojunctions; Microwaves; Power amplifiers, Broadband amplifiers
note: cited By 3; Conference of 13th European Microwave Week 2010, EuMW2010: Connecting the World - 40th European Microwave Conference, EuMC 2010 ; Conference Date: 28 September 2010 Through 30 September 2010; Conference Code:82809
abstract: High linearity over a broad frequency band is a requirement in many RF amplifier designs. This paper shows that adding low impedance terminations at the envelope frequency (�2-�1) to the input of a Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) Distributed Amplifier (DA) improves the third order output intercept point (OIP3) over a bandwidth of 0.5 GHz to 3 GHz by up to 7.4 dB. Furthermore, OIP3 can be increased up to 19.2 dB above P1dB. Results show that the improvement in OIP3 comes without lowering gain, return loss or P1dB. Simulation and measurement results also show that the optimum termination is a short circuit with a small capacitive reactance at the envelope frequency. By varying the frequency spacing (��) from 1 MHz to 50 MHz, the resulting variation in OIP3 after the addition of the traps is less than 7. © 2010 EuMA.
date: 2010
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650058148&partnerID=40&md5=3a3b2f2096ac557c074088bb7d6bdbdb
full_text_status: none
publication: European Microwave Week 2010, EuMW2010: Connecting the World, Conference Proceedings - European Microwave Conference, EuMC 2010
place_of_pub: Paris
pagerange: 878-881
refereed: TRUE
isbn: 9782874870163
citation:   Koh, M. and Ellis, G.A. and Teoh, C.S.  (2010) Broadband linearization of InGaP/GaAs HBT power amplifier.  In: UNSPECIFIED.