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primary topic: Broadband linearization of InGaP/GaAs HBT power amplifier

Broadband linearization of InGaP/GaAs HBT power amplifier
type: AcademicArticle
type: Article
abstract: High linearity over a broad frequency band is a requirement in many RF amplifier designs. This paper shows that adding low impedance terminations at the envelope frequency (Ï�2-Ï�1) to the input of a Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) Distributed Amplifier (DA) improves the third order output intercept point (OIP3) over a bandwidth of 0.5 GHz to 3 GHz by up to 7.4 dB. Furthermore, OIP3 can be increased up to 19.2 dB above P1dB. Results show that the improvement in OIP3 comes without lowering gain, return loss or P1dB. Simulation and measurement results also show that the optimum termination is a short circuit with a small capacitive reactance at the envelope frequency. By varying the frequency spacing (Î�Ï�) from 1 MHz to 50 MHz, the resulting variation in OIP3 after the addition of the traps is less than 7. © 2010 EuMA.
date: 2010
status: peerReviewed
status: published
author list: authors
type: EPrint
type: ConferenceItemEPrint
is part of: repository

European Microwave Week 2010, EuMW2010: Connecting the World, Conference Proceedings - European Microwave Conference, EuMC 2010
type: Collection

C.S. Teoh
type: Person
given name: C.S.
family name: Teoh

M. Koh
type: Person
given name: M.
family name: Koh

G.A. Ellis
type: Person
given name: G.A.
family name: Ellis

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primary topic: Broadband linearization of InGaP/GaAs HBT power amplifier