@inproceedings{scholars8034,
           title = {An overview of instanteneous radiation effect on MOSFETs for harsh environment applications},
            note = {cited By 2; Conference of 3rd IEEE International Symposium in Robotics and Manufacturing Automation, ROMA 2017 ; Conference Date: 19 September 2017 Through 21 September 2017; Conference Code:134001},
          volume = {2017-D},
             doi = {10.1109/ROMA.2017.8231837},
         journal = {2017 IEEE 3rd International Symposium in Robotics and Manufacturing Automation, ROMA 2017},
       publisher = {Institute of Electrical and Electronics Engineers Inc.},
           pages = {1--6},
            year = {2017},
            isbn = {9781538625392},
          author = {Yahya, E. A. and Kannan, R. and Baharudin, Z. and Krishnamurthy, S.},
        abstract = {In recent years, the advent of Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) rank as one of the most significant development in power electronics. Its ability to work at high-voltage and high-frequency make MOSFETs become the most important electronic device for many power system circuit. For harsh environment application in example the satellite system, requires the MOSFETs dealing with the radiation exposure which then causes ionizing radiation phenomena in the devices. Basically, the radiation's source in the harsh environment divided into two types which are; photon radiation and particle radiation. The radiation exposure may affect MOSFET's performance by changing the electrical characteristic and properties because of its occasion of a shift in threshold voltage (Vth) and changes in drain-source resistance (Rds). Moreover, there are two major catastrophic outcomes on MOSFETs which are; Single Event Gate Rupture (SEGR) which affects the functionality of the gate dielectric and Single Event Burnout (SEB) which results in shortening the drain to source current (Ids). Eventually, the primary focus of this paper is to study the topology of instantaneous radiation effect on MOSFETs for harsh environment application. All the information and data that will be discuss through this paper is getting from the literature surveys activities. {\^A}{\copyright} 2017 IEEE.},
        keywords = {Dielectric devices; Drain current; Electric breakdown; Electron beam lithography; Gate dielectrics; Ionizing radiation; Manufacture; Metallic compounds; Metals; MOS devices; MOSFET devices; Network security; Oxide semiconductors; Radiation hardening; Robotics; Threshold voltage; Transistors, Drain sources; Drain-source currents; Single-event burnouts; Single-event gate rupture; Threshold voltages (Vth), Power MOSFET},
             url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85048435780&doi=10.1109\%2fROMA.2017.8231837&partnerID=40&md5=bcbd63433e59bcc39b99981d197c0652}
}