eprintid: 777
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/07/77
datestamp: 2023-11-09 15:48:55
lastmod: 2023-11-09 15:48:55
status_changed: 2023-11-09 15:23:09
type: article
metadata_visibility: show
creators_name: Yahaya, N.Z.
creators_name: Ramle, F.H.
title: Simulation and analysis of Si schottky diode family in DC-DC converter
ispublished: pub
note: cited By 0
abstract: The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the FET in the DC-DC converter. Two inductive load chopper circuits are simulated with different test diodes using PSpice software to determine the effectiveness and superiority in each of the devices. All parameter settings are consistent for both converter circuits. The results have shown that the SiC diode has higher energy savings of more than 73.13  in turn-off switching losses. This eventually corresponds to the reduction of 96.16  in FET turn-on peak power dissipation of SiC converter. However, there is a minor drawback in drain voltage overshoot of the converter. Some detailed analyses are presented in the paper.
date: 2009
publisher: School of Electrical Engineering and Informatics
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84861631233&doi=10.15676%2fijeei.2009.1.2.5&partnerID=40&md5=40617f7c9b36cae9d694876be2195509
id_number: 10.15676/ijeei.2009.1.2.5
full_text_status: none
publication: International Journal on Electrical Engineering and Informatics
volume: 1
number: 2
pagerange: 137-148
refereed: TRUE
issn: 20856830
citation:   Yahaya, N.Z. and Ramle, F.H.  (2009) Simulation and analysis of Si schottky diode family in DC-DC converter.  International Journal on Electrical Engineering and Informatics, 1 (2).  pp. 137-148.  ISSN 20856830