relation: https://khub.utp.edu.my/scholars/777/
title: Simulation and analysis of Si schottky diode family in DC-DC converter
creator: Yahaya, N.Z.
creator: Ramle, F.H.
description: The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the FET in the DC-DC converter. Two inductive load chopper circuits are simulated with different test diodes using PSpice software to determine the effectiveness and superiority in each of the devices. All parameter settings are consistent for both converter circuits. The results have shown that the SiC diode has higher energy savings of more than 73.13  in turn-off switching losses. This eventually corresponds to the reduction of 96.16  in FET turn-on peak power dissipation of SiC converter. However, there is a minor drawback in drain voltage overshoot of the converter. Some detailed analyses are presented in the paper.
publisher: School of Electrical Engineering and Informatics
date: 2009
type: Article
type: PeerReviewed
identifier:   Yahaya, N.Z. and Ramle, F.H.  (2009) Simulation and analysis of Si schottky diode family in DC-DC converter.  International Journal on Electrical Engineering and Informatics, 1 (2).  pp. 137-148.  ISSN 20856830     
relation: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84861631233&doi=10.15676%2fijeei.2009.1.2.5&partnerID=40&md5=40617f7c9b36cae9d694876be2195509
relation: 10.15676/ijeei.2009.1.2.5
identifier: 10.15676/ijeei.2009.1.2.5