eprintid: 766
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/07/66
datestamp: 2023-11-09 15:48:54
lastmod: 2023-11-09 15:48:54
status_changed: 2023-11-09 15:23:08
type: article
metadata_visibility: show
creators_name: Yahaya, N.Z.
creators_name: Raethar, M.B.K.
creators_name: Awan, M.
title: Review on Gallium Nitride HEMT device technology for high frequency converter applications
ispublished: pub
note: cited By 9
abstract: This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.
date: 2009
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-58849136226&partnerID=40&md5=c8a21b4df42fe915a8a755284c23f8fa
full_text_status: none
publication: Journal of Power Electronics
volume: 9
number: 1
pagerange: 36-42
refereed: TRUE
issn: 15982092
citation:   Yahaya, N.Z. and Raethar, M.B.K. and Awan, M.  (2009) Review on Gallium Nitride HEMT device technology for high frequency converter applications.  Journal of Power Electronics, 9 (1).  pp. 36-42.  ISSN 15982092