TY  - CONF
Y1  - 2009///
KW  - Center frequency; Current mirrors; Damping resistors; DC power supplies; Figure of merit; Frequency tuning range; Gate fingers; Gate structure; Low phase noise; Multifingers; Offset frequencies; pMOS; Power dissipation; Quadrature signal; Quadrature VCO; Quadrature voltage controlled oscillator; QVCO; RF CMOS
KW  -  Electric power utilization; Microwave devices; Microwaves; Resistors; Technology; Varactors; Variable frequency oscillators; Wireless telecommunication systems
KW  -  Phase noise
TI  - 5-GHz low-phase noise quadrature VCO in 0.13-μm RF CMOS process technology
N2  - In this paper, a 5 GHz low-phase noise RF CMOS quadrature voltage controlled oscillator (QVCO) is presented. The quadrature signals are generated by coupling two VCOs through pMOS coupling transistors. The tail biasing MOS current mirror is replaced with tail biasing resistor of 100 Ω, multifingers gate structure of pMOS varactor (3.125 μm width of each gate finger) and source damping resistor of 40 Ω are the techniques which are used to achieve low phase noise in proposed QVCO. The pMOS varactor releases the frequency tuning range of 5.26  from the center frequency of 5.13 GHz. The proposed QVCO core power dissipation is 3.7 mW from 1.2 V dc power supply. The QVCO exhibits the measured phase noise of -118.24 dBc/Hz at the offset frequency of 1 MHz. The calculated figure of merit is -186.7. The proposed QVCO is implemented utilizing 0.13 μm 1 poly 8 metal RF CMOS process technology. ©2009 IEEE.
SN  - 9781424445653
CY  - Clearwater, FL
N1  - cited By 12; Conference of 2009 IEEE 10th Annual Wireless and Microwave Technology Conference, WAMICON 2009 ; Conference Date: 20 April 2009 Through 21 April 2009; Conference Code:78012
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-70449365336&doi=10.1109%2fWAMICON.2009.5207300&partnerID=40&md5=2ae798f51ac63612a0e50c7364822e6d
A1  - Zafar, S.
A1  - Awan, M.
A1  - Zulkifli, T.Z.A.
ID  - scholars655
AV  - none
ER  -