TY  - JOUR
VL  - 9
JF  - Applied Mathematics and Information Sciences
A1  - Dennis, J.O.
A1  - Ahmed, A.Y.
A1  - Md. Khir, M.H.
A1  - Rabih, A.A.S.
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-84930981813&doi=10.12785%2famis%2f090221&partnerID=40&md5=cce3ea33a9eb8f0c9a2206e031dd251b
Y1  - 2015///
ID  - scholars6323
N2  - This paper reports analytical modeling and finite element analysis (FEA) of the effect of two types of air damping (squeeze film and slide film damping) on resonance frequency and quality factor of a multi-layer CMOS-MEMS resonator designed for application as a mass sensitive gas sensor. The sensing principle is based on change in frequency or amplitude of the resonator due to adsorption/absorption of trace gases onto an active material to be deposited on the resonator membrane plate. The effect of air damping for mode 1 and mode 2 are investigated and the damping coefficient is found to increase from 0.922 � 10-6Ns/m to 1.768 � 10-6Ns/m for mode 1 and from 0.914 � 10-6Ns/m to 1.708 � 10-6Ns/m for mode 2 with increase in the overlap area of the fingers from 40μm to 75μm, respectively. The quality factor (Q) of the CMOS-MEMS resonator is found to decrease with increasing damping coefficient for both modes of vibration while the frequency remained unaffected. Analytical and simulation results shows good agreement for damping coefficient (1.43 and 1.22), resonant frequency (3.45 and 4.4) and quality factor (2.27 and 0.88) for mode 1 and 2, respectively. © 2015 NSP.
IS  - 2
EP  - 737
PB  - Natural Sciences Publishing Co.
SN  - 19350090
TI  - Modelling and simulation of the effect of air damping on the frequency and quality factor of a CMOS-MEMS resonator
SP  - 729
N1  - cited By 20
AV  - none
ER  -