TY  - CONF
N2  - This paper presents a monolithic, low-noise capacitive readout interface circuit for CMOS-MEMS resonator based gravimetric chemical gas sensors. In these sensor devices, where the sense capacitances are usually very weak, the readout interface circuit plays a crucial role in determining the overall sensor performance. Noise is observed in various active and passive devices affecting circuit performances. Particularly at low frequencies, flicker noise is dominant in degrading the quality of output signals. A dual stage, open-loop continuous time voltage sensing with chopper stabilization technique is proposed in this work to cope with it and improve the total output signal SNR. The proposed circuit is designed based on MIMOS 0.35 μm AMS 3.3V CMOS technology. Cadence Spectre circuit simulator simulation results show, the proposed circuit achieves an input inferred noise of 11.6 n V/â??Hz, total gain of 48.1 dB and consumes a total power of 3.385 mW. The designed circuit is able to detect minute capacitance changes as low as 0.0365 aF with total sensitivity of 67.95 μV/aF. © 2015 IEEE.
N1  - cited By 4; Conference of 12th IEEE AFRICON International Conference, AFRICON 2015 ; Conference Date: 14 September 2015 Through 17 September 2015; Conference Code:118232
ID  - scholars5615
TI  - A monolithic, low-noise, capacitive readout interface circuit for CMOS-MEMS resonator-based gravimetric chemical gas sensors
KW  - Capacitance; Capacitive sensors; CMOS integrated circuits; Continuous time systems; Gas detectors; Logic circuits; MEMS; Microelectromechanical devices; Phase interfaces; Reconfigurable hardware; Resonators; Signal to noise ratio; Spurious signal noise; Stabilization
KW  -  Active and passive device; Chemical gas sensors; Chopper stabilization; Chopper stabilization techniques; Circuit performance; Flicker noise; Gravimetric; Interface circuits
KW  -  Circuit simulation
AV  - none
A1  - Sutri, N.Y.
A1  - Dennis, J.O.
A1  - Khir, M.H.M.
A1  - Ahmed, A.Y.
A1  - Mian, M.U.
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-84962581641&doi=10.1109%2fAFRCON.2015.7332004&partnerID=40&md5=5f22f8b5a414cdb5f8e684858a39d655
VL  - 2015-N
Y1  - 2015///
PB  - Institute of Electrical and Electronics Engineers Inc.
SN  - 21530025
ER  -