eprintid: 5590 rev_number: 2 eprint_status: archive userid: 1 dir: disk0/00/00/55/90 datestamp: 2023-11-09 16:17:20 lastmod: 2023-11-09 16:17:20 status_changed: 2023-11-09 16:03:15 type: article metadata_visibility: show creators_name: Muthuvalu, M.S. creators_name: Asirvadam, V.S. creators_name: Mashadov, G. title: Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device ispublished: pub keywords: Finite difference method; Heat conduction; Iterative methods; Microelectronics; Numerical methods; Reliability, Arithmetic mean method; Heat conduction equations; Junction temperatures; Mathematical approach; Micro-electronic devices; Numerical approaches; Peak junction temperature; Performance analysis, Semiconductor junctions note: cited By 3 abstract: High reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters to improve device reliability and extend operating life. The reliability of a semiconductor is determined by junction temperature. This paper gives a useful analysis on mathematical approach which can be implemented to predict temperature of a silicon die. The problem could be modeled as heat conduction equation. In this study, numerical approach based on implicit scheme and Arithmetic Mean (AM) iterative method will be applied to solve the governing heat conduction equation. Numerical results are also included in order to assert the effectiveness of the proposed technique. © 2015 Faculty of Engineering, Ain Shams University. date: 2015 publisher: Ain Shams University official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959573705&doi=10.1016%2fj.asej.2015.04.007&partnerID=40&md5=470d9370541546c69be91fcaf46fd6ee id_number: 10.1016/j.asej.2015.04.007 full_text_status: none publication: Ain Shams Engineering Journal volume: 6 number: 4 pagerange: 1203-1210 refereed: TRUE issn: 20904479 citation: Muthuvalu, M.S. and Asirvadam, V.S. and Mashadov, G. (2015) Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device. Ain Shams Engineering Journal, 6 (4). pp. 1203-1210. ISSN 20904479