TY  - CONF
Y1  - 2015///
PB  - Institute of Electrical and Electronics Engineers Inc.
SN  - 9781479985500
A1  - Gafare, M.
A1  - Khir, M.H.M.
A1  - Rabih, A.
A1  - Ahmed, A.
A1  - Dennis, J.O.
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-84963811379&doi=10.1109%2fRSM.2015.7354957&partnerID=40&md5=ea763e79eeded8040cad021e4666a13e
AV  - none
N1  - cited By 2; Conference of 10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015 ; Conference Date: 19 August 2015 Through 21 August 2015; Conference Code:118464
N2  - This paper reports modeling and simulation of polysilicon piezoresistors as sensing mechanism using commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The CMOS-MEMS resonator is designed to detect change in mass. The designed piezoresistors are composed of two types; longitudinal and transverse. CMOS polysilicon thin film is used as the piezoresistive sensing material. The finite element analysis (FEA) software CoventorWare is adopted to simulate the piezoresistors and hence, compare its values with the modeled one. When actuation voltage is applied to the piezoresistors, it generates a change in resistance which is detected by the change in current. The percentage difference between simulated stressed and unstressed current is found to be 0.28  and 0.47  while the difference in the resistance between the model and simulation is 1.96  and 4.54  for the transverse and longitudinal piezoresistors, respectively. © 2015 IEEE.
ID  - scholars5576
TI  - Modeling and simulation of polysilicon piezoresistors in a CMOS-MEMS resonator for mass detection
KW  - Metals; Microelectromechanical devices; MOS devices; Nanoelectronics; Oxide semiconductors; Polycrystalline materials; Polysilicon; Resonators
KW  -  CMOS-MEMS; Complementary metal oxide semiconductor process; longitudinal; Model and simulation; Piezoresistive sensing; Piezoresistor; Polysilicon thin films; transverse
KW  -  Finite element method
ER  -