eprintid: 5451
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/54/51
datestamp: 2023-11-09 16:17:11
lastmod: 2023-11-09 16:17:11
status_changed: 2023-11-09 16:01:42
type: article
metadata_visibility: show
creators_name: Abdul Hadi, M.H.
creators_name: Ahmad, B.H.
creators_name: Wong, P.W.
creators_name: Shairi, N.A.
title: An overview of isolation improvement techniques in RF switch
ispublished: pub
note: cited By 18
abstract: In this paper, five techniques to improve isolation of RF switch are reviewed which are material with fabrication process design, circuit design, resonant circuit, transmission line and resonator. Most of these isolation improvement techniques are applied in RF switch designs such as single pole single throw (SPST) and single pole multi throw (SPMT). Several solid-state devices are used for switching element such as PIN diode, MEMS, FET, HBT and HEMT. They are commonly used in satelite communication, radar system, instrumentation and base station applications. © 2006-2014 Asian Research Publishing Network (ARPN).
date: 2014
publisher: Asian Research Publishing Network
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84896965987&partnerID=40&md5=07f8da2d74318df63f29f212d953ce96
full_text_status: none
publication: ARPN Journal of Engineering and Applied Sciences
volume: 9
number: 3
pagerange: 342-348
refereed: TRUE
issn: 18196608
citation:   Abdul Hadi, M.H. and Ahmad, B.H. and Wong, P.W. and Shairi, N.A.  (2014) An overview of isolation improvement techniques in RF switch.  ARPN Journal of Engineering and Applied Sciences, 9 (3).  pp. 342-348.  ISSN 18196608