%P 245-257
%V 55
%I Institute of Electrical and Electronics Engineers Inc.
%A N.H. Hamid
%A A.F. Murray
%A S. Roy
%T Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET
%J IEEE Transactions on Circuits and Systems I: Regular Papers
%L scholars513
%O cited By 17
%N 1
%R 10.1109/TCSI.2007.910543
%D 2008
%X 1/f noise and random telegraph signal (RTS) noise are increasingly dominant sources of low-frequency noise as the MOSFET enters the nanoscale regime. In this study, 1 noise and RTS noise in the n-channel MOSFET are modelled in the time domain for efficient implementation in transient circuit simulation. A technique based on sum-of-sinusoids models 1/f noise while a Monte Carlo based technique is used to generate RTS noise. Lowfrequency noise generated using these models exhibits the correct form of noise characteristics as predicted by theory, with noise parameters from standard 0.35- μm and 35-nm CMOS technology. Implementation of the time-domain model in SPICE shows the utility of the noisy MOSFET model in simulating the effect of lowfrequency noise on the operation of deep-submicrometer analog integrated circuits. © 2008 IEEE.
%K Circuit simulation; Computer simulation; Monte Carlo methods; SPICE; Time domain analysis; Transients, Low-frequency noise; Random telegraph signal noise; Semiconductor device modeling, MOSFET devices