TY  - JOUR
EP  - 257
SN  - 10577122
PB  - Institute of Electrical and Electronics Engineers Inc.
N1  - cited By 17
TI  - Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET
SP  - 245
AV  - none
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-42949160544&doi=10.1109%2fTCSI.2007.910543&partnerID=40&md5=f1a11c69b7a75114691873e828403461
A1  - Hamid, N.H.
A1  - Murray, A.F.
A1  - Roy, S.
JF  - IEEE Transactions on Circuits and Systems I: Regular Papers
VL  - 55
Y1  - 2008///
N2  - 1/f noise and random telegraph signal (RTS) noise are increasingly dominant sources of low-frequency noise as the MOSFET enters the nanoscale regime. In this study, 1 noise and RTS noise in the n-channel MOSFET are modelled in the time domain for efficient implementation in transient circuit simulation. A technique based on sum-of-sinusoids models 1/f noise while a Monte Carlo based technique is used to generate RTS noise. Lowfrequency noise generated using these models exhibits the correct form of noise characteristics as predicted by theory, with noise parameters from standard 0.35- μm and 35-nm CMOS technology. Implementation of the time-domain model in SPICE shows the utility of the noisy MOSFET model in simulating the effect of lowfrequency noise on the operation of deep-submicrometer analog integrated circuits. © 2008 IEEE.
IS  - 1
KW  - Circuit simulation; Computer simulation; Monte Carlo methods; SPICE; Time domain analysis; Transients
KW  -  Low-frequency noise; Random telegraph signal noise; Semiconductor device modeling
KW  -  MOSFET devices
ID  - scholars513
ER  -