eprintid: 508
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/05/08
datestamp: 2023-11-09 15:16:09
lastmod: 2023-11-09 15:16:09
status_changed: 2023-11-09 15:14:43
type: article
metadata_visibility: show
creators_name: Lai, M.K.
creators_name: Mohamed, N.M.
creators_name: Begam, K.M.
title: The role of Al2O3 buffer layer in the growth of aligned CNTs
ispublished: pub
keywords: Aluminum; Carbon; Computer networks; Cubic boron nitride; Fullerenes; Growth (materials); Interfaces (materials); Materials; Materials science; Metropolitan area networks; Multiwalled carbon nanotubes (MWCN); Nanocomposites; Nanopores; Nanostructured materials; Nanostructures; Nanotechnology; Nanotubes; Network protocols; Pigments; Technology, carbon atoms; Functional devices; If there are; international conferences; Materials science and technology; Multi walled; Multiple walls; Multiwalled carbon nanotubes (MW-CNT); nano tube, Carbon nanotubes
note: cited By 17; Conference of International Conference on Frontiers in Materials Science and Technology, FMST 2008 ; Conference Date: 26 March 2008 Through 28 March 2008; Conference Code:72338
abstract: Carbon nanotube (CNT) can be thought of as a hexagonal network of carbon atoms that has been rolled up to make a seamless cylinder. If they are consisting of one layer, they are termed singled-walled CNTs (SWNTs) while if there are multiple walls, they are called multi-walled CNTs (MWNTs). For most functional devices application, an aligned arrangement of CNTs is desired. Aligned multiwalled carbon nanotubes (MWNTs) have been successfully grown by the inclusion of a buffer layer of oxidized Al. An Al2O3 layer has been proven to be an important contributing factor towards obtaining good quality aligned CNTs. In this work, Al is deposited onto the Si wafer using electron beam evaporation and later oxidized by heating in air. A thin layer of iron catalyst is then deposited on top of the oxidized Al layer and annealed at 400°C. The result shows an improvement in the intensity of the graphitization peak (G-band) in the Raman spectra and aligned MWNTs is observed in these samples compared to the ones that have undergone the same process parameter except the Al2O3 layer.
date: 2008
publisher: Trans Tech Publications
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-45749088120&doi=10.4028%2f0-87849-475-8.29&partnerID=40&md5=2f1e29ece69e14ea70acc9940e060dde
id_number: 10.4028/0-87849-475-8.29
full_text_status: none
publication: Advanced Materials Research
volume: 32
place_of_pub: Brisbane, QLD
pagerange: 29-32
refereed: TRUE
isbn: 0878494758; 9780878494750
issn: 10226680
citation:   Lai, M.K. and Mohamed, N.M. and Begam, K.M.  (2008) The role of Al2O3 buffer layer in the growth of aligned CNTs.  Advanced Materials Research, 32.  pp. 29-32.  ISSN 10226680