@article{scholars4402,
            year = {2014},
         journal = {IEEE Transactions on Very Large Scale Integration (VLSI) Systems},
           pages = {220--231},
          number = {2},
          volume = {22},
            note = {cited By 2},
             doi = {10.1109/TVLSI.2013.2243926},
           title = {Multivoltage aware resistive open fault model},
            issn = {10638210},
          author = {Mohammadat, M. T. and Ali, N. B. Z. and Hussin, F. A. and Zwolinski, M.},
             url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84895058997&doi=10.1109\%2fTVLSI.2013.2243926&partnerID=40&md5=e7b39d3c890a0e92812dee76a332984b},
        abstract = {Resistive open faults (ROFs) represent common interconnect manufacturing defects in VLSI designs causing delay failures and reliability-related concerns. The widespread utilization of multiple supply voltages in contemporary VLSI designs and emerging test methods poses a critical concern as to whether conventional models for resistive opens will still be effective. Conventional models do not explicitly model the VDD effect on fault behavior and detectability. We have empirically observed that a sensitized ROF could exhibit multiple behaviors across its resistance continuum. We also observe that the detectable resistance range versus VDD varies with test speed. We consequently propose a voltage-aware model that divides the full range of open resistances into continuous behavioral intervals and three detectability ranges. The presented model is expected to substantially enhance multivoltage test generation and fault distinction. {\^A}{\copyright} 1993-2012 IEEE.}
}