@inproceedings{scholars431, address = {Daejeon}, title = {Simulation of an inductive coupled high frequency resonant gate driver circuit}, journal = {IEEE International Conference on Industrial Informatics (INDIN)}, pages = {1523--1527}, note = {cited By 2; Conference of IEEE INDIN 2008: 6th IEEE International Conference on Industrial Informatics ; Conference Date: 13 July 2008 Through 16 July 2008; Conference Code:73833}, doi = {10.1109/INDIN.2008.4618346}, year = {2008}, issn = {19354576}, author = {Yahaya, N. Z. and Begam, K. M. and Awan, M.}, isbn = {9781424421718}, keywords = {Automobile drivers; Circuit simulation; Diesel engines; MOSFET devices; Network protocols; Sensor networks; SPICE, Circuit simulators; Gate driver circuits; Gate drivers; High frequencies; Inductive; LC networks; Linear transformers; Load conditions; MOSFETs; Operating currents; Resonant inductors; Switching cycles; Turn-off, Coupled circuits}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-54849441449&doi=10.1109\%2fINDIN.2008.4618346&partnerID=40&md5=ce31f974d69da411461db5a0cc9ef3dc}, abstract = {Abstract-The implementation of an independent-duty-cycled high frequency resonant gate driver (RGD) circuit utilizing an inductive coupled linear transformer is proposed and simulated using PSpice circuit simulator. The totem-poled configuration of driving MOSFETs that makes the resonant LC network is used in the proposed RGD circuit. The free-wheeling diodes are used to recover full energy where most of the charged and discharged operating current flow in the resonant inductor is returned back to the input source during switching cycle transition. The work has been carried out using 1 MHz switching frequency with fixed input and load conditions. With each pair of driving MOSFETs providing D and 1-D of switching ratios, the turn-on and turn-off speed has been improved by 12 and 23 respectively while the total RGD losses reduced to 4 . {\^A}{\copyright}2008 IEEE.} }