eprintid: 393
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/03/93
datestamp: 2023-11-09 15:16:01
lastmod: 2023-11-09 15:16:01
status_changed: 2023-11-09 15:14:28
type: conference_item
metadata_visibility: show
creators_name: Hassan, K.N.
creators_name: Mani, N.A.
creators_name: Sari'at, S.S.
creators_name: Yahaya, N.Z.
title: Comparative study of CoolMOS and MOSFET in high frequency circuit design
ispublished: pub
keywords: Comparative studies; CoolMOS; Driving power; High frequencies; High frequency inverter; High qualities; High-frequency circuit designs; High-frequency operations; High-power applications; High-power devices; Inverter circuits; MOSFET; Operating cycles; Output loads; Power devices; Power loss; Power savings; Switching activities; Switching loss; Ups systems, DC generators; Electric equipment; Integrated circuit manufacture; Power supply circuits, MOSFET devices
note: cited By 4; Conference of 2008 IEEE 2nd International Power and Energy Conference, PECon 2008 ; Conference Date: 1 December 2008 Through 3 December 2008; Conference Code:75682
abstract: The aim of this paper is to compare two high power devices namely CoolMOS and MOSFET in high frequency basic inverter circuit. Where inverter can be used in UPS system, obtaining high quality and efficient AC output at the load requires proper selection of driving power switches. Even though MOSFET has already known for its superior in high frequency operation and high power applications, CoolMOS power device could produce better results in lowering total switching loss in the inverter. The study also looks into the comparison of power losses in the output load from switching activity of both devices during their operating cycles. From the experiment, it can be seen that CoolMOS device can produce higher power saving by at least 82 compared to its counterpart, MOSFET. © 2008 IEEE.
date: 2008
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-63049099793&doi=10.1109%2fPECON.2008.4762641&partnerID=40&md5=25740a44f5f273724927ba2ede216824
id_number: 10.1109/PECON.2008.4762641
full_text_status: none
publication: PECon 2008 - 2008 IEEE 2nd International Power and Energy Conference
place_of_pub: Johor Baharu
pagerange: 1108-1111
refereed: TRUE
isbn: 9781424424054
citation:   Hassan, K.N. and Mani, N.A. and Sari'at, S.S. and Yahaya, N.Z.  (2008) Comparative study of CoolMOS and MOSFET in high frequency circuit design.  In: UNSPECIFIED.