TY - JOUR IS - 4 KW - Aspect ratio; Chemical vapor deposition; Epitaxial growth; Flow of gases; Growth rate; Nanowires; Nitrogen compounds; Optical properties KW - Anti-reflection; Deposition time; Epitaxially grown; Growth process; Hot wire chemical vapor deposition; Silicon nano-columns; Silicon nanowires; Single-crystalline KW - Silicon KW - hydrogen; indium; nanowire; oxide; silane; silicon KW - article; crystal; flow rate; gas flow; growth rate; priority journal; vapor N1 - cited By 14 A1 - Chong, S.K. A1 - Dee, C.F. A1 - Yahya, N. A1 - Rahman, S.A. Y1 - 2013/// SN - 13880764 TI - Control growth of silicon nanocolumns' epitaxy on silicon nanowires ID - scholars3694 AV - none UR - https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874931795&doi=10.1007%2fs11051-013-1571-z&partnerID=40&md5=7c84e5f62010957938cfc69b7412f8ba VL - 15 JF - Journal of Nanoparticle Research PB - Kluwer Academic Publishers N2 - The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius ~21 ± 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text. © 2013 Springer Science+Business Media Dordrecht. ER -