eprintid: 3221
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/32/21
datestamp: 2023-11-09 15:51:29
lastmod: 2023-11-09 15:51:29
status_changed: 2023-11-09 15:45:15
type: article
metadata_visibility: show
creators_name: Ahmad, F.
creators_name: Dennis, J.O.
creators_name: Md Khir, M.H.
creators_name: Hamid, N.H.
title: A CMOS MEMS resonant magnetic field sensor with differential electrostatic actuation and capacitive sensing
ispublished: pub
keywords: Capacitive sensing; CMOS-MEMS; Comb resonator; Comb-drive actuator; Damping ratio; Deep reactive ion etching; Electrostatic actuation; External magnetic field; Output signal; Quality factors; Resonant magnetic field sensors, Electrostatic actuators; Electrostatics; Magnetic fields; Magnetic sensors; Magnetometers; Microelectromechanical devices; Natural frequencies; Resonators, Reactive ion etching
note: cited By 5; Conference of 2011 7th International Conference on MEMS, NANO and Smart Systems, ICMENS 2011 ; Conference Date: 4 November 2011 Through 6 November 2011; Conference Code:87709
abstract: This paper is about CMOS MEMS resonant magnetic field sensor in which differential electrostatic actuation, capacitive sensing, resonant frequency, quality factor and sensitivity of interdigitated comb resonator is investigated. Information is embedded in the output signal frequency because it is robust against the interference from other sources during transmission. At damping ratio of 0.0001, resonant frequency of the comb resonator is 4.35 kHz with quality factor 5000 and amplitude 18.45 μm. Sensitivity of the device towards external magnetic field is 9.455 mHz/nT which is 10,000 times improved than recently published data. © (2012) Trans Tech Publications, Switzerland.
date: 2012
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-83255170470&doi=10.4028%2fwww.scientific.net%2fAMR.403-408.4205&partnerID=40&md5=bf7296fd99a5904e5e6795a946dbdbde
id_number: 10.4028/www.scientific.net/AMR.403-408.4205
full_text_status: none
publication: Advanced Materials Research
volume: 403-40
place_of_pub: Kuala Lumpur
pagerange: 4205-4209
refereed: TRUE
isbn: 9783037853122
issn: 10226680
citation:   Ahmad, F. and Dennis, J.O. and Md Khir, M.H. and Hamid, N.H.  (2012) A CMOS MEMS resonant magnetic field sensor with differential electrostatic actuation and capacitive sensing.  Advanced Materials Research, 403-40.  pp. 4205-4209.  ISSN 10226680