TY  - JOUR
SN  - 10226680
EP  - 4209
AV  - none
N1  - cited By 5; Conference of 2011 7th International Conference on MEMS, NANO and Smart Systems, ICMENS 2011 ; Conference Date: 4 November 2011 Through 6 November 2011; Conference Code:87709
SP  - 4205
TI  - A CMOS MEMS resonant magnetic field sensor with differential electrostatic actuation and capacitive sensing
Y1  - 2012///
JF  - Advanced Materials Research
A1  - Ahmad, F.
A1  - Dennis, J.O.
A1  - Md Khir, M.H.
A1  - Hamid, N.H.
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-83255170470&doi=10.4028%2fwww.scientific.net%2fAMR.403-408.4205&partnerID=40&md5=bf7296fd99a5904e5e6795a946dbdbde
VL  - 403-40
CY  - Kuala Lumpur
N2  - This paper is about CMOS MEMS resonant magnetic field sensor in which differential electrostatic actuation, capacitive sensing, resonant frequency, quality factor and sensitivity of interdigitated comb resonator is investigated. Information is embedded in the output signal frequency because it is robust against the interference from other sources during transmission. At damping ratio of 0.0001, resonant frequency of the comb resonator is 4.35 kHz with quality factor 5000 and amplitude 18.45 μm. Sensitivity of the device towards external magnetic field is 9.455 mHz/nT which is 10,000 times improved than recently published data. © (2012) Trans Tech Publications, Switzerland.
ID  - scholars3221
KW  - Capacitive sensing; CMOS-MEMS; Comb resonator; Comb-drive actuator; Damping ratio; Deep reactive ion etching; Electrostatic actuation; External magnetic field; Output signal; Quality factors; Resonant magnetic field sensors
KW  -  Electrostatic actuators; Electrostatics; Magnetic fields; Magnetic sensors; Magnetometers; Microelectromechanical devices; Natural frequencies; Resonators
KW  -  Reactive ion etching
ER  -