eprintid: 3197 rev_number: 2 eprint_status: archive userid: 1 dir: disk0/00/00/31/97 datestamp: 2023-11-09 15:51:27 lastmod: 2023-11-09 15:51:27 status_changed: 2023-11-09 15:45:12 type: article metadata_visibility: show creators_name: Heng, G.C. creators_name: Elmolla, E.S. creators_name: Chaudhuri, M. title: Optimization of photo-fenton treatment of mature landfill leachate ispublished: pub keywords: Ammonia; Biochemical engineering; Molar ratio, Biological treatment; Landfill leachates; Operating variables; Photo-Fenton; Photo-Fenton treatments; Removal efficiencies; Response surface methodology; Treatment process, Leachate treatment, biochemical oxygen demand; color; irradiation; landfill; leachate; optimization note: cited By 9 abstract: Photo-Fenton treatment of amature landfill leachatewas optimized by using the response surfacemethodology (RSM). The optimum operating variables to achieve 70removal of COD, 80removal of colour and 80 removal of NH 3-N were: H2O2/CODmolar ratio 3.75, H 2O2/Fe2+molar ratio 10.5 and irradiation time 1.5 h. There was good agreement (< 2error) between experimental removal efficiency andmodel prediction. The characteristics of the photo-Fenton treated leachate were: NH3-N 112 mg/L, colour 108 Pt-Co Unit, COD350mg/L, BOD5 116mg/L andBOD5/CODratio 0.33, indicating that the treated leachatewas amenable to biological treatment. The study has revealed thatRSMis an effective tool to optimize the treatment process and photo-Fenton is an effective pretreatment ofmature landfill leachate for biological treatment. date: 2012 publisher: Technoscience Publications official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84859362300&partnerID=40&md5=0d51dfb9c2db41789e08b9007143bb02 full_text_status: none publication: Nature Environment and Pollution Technology volume: 11 number: 1 pagerange: 65-72 refereed: TRUE issn: 09726268 citation: Heng, G.C. and Elmolla, E.S. and Chaudhuri, M. (2012) Optimization of photo-fenton treatment of mature landfill leachate. Nature Environment and Pollution Technology, 11 (1). pp. 65-72. ISSN 09726268