@inproceedings{scholars2717,
          volume = {2},
            note = {cited By 0; Conference of 2012 4th International Conference on Intelligent and Advanced Systems, ICIAS 2012 ; Conference Date: 12 June 2012 Through 14 June 2012; Conference Code:93534},
             doi = {10.1109/ICIAS.2012.6306127},
         address = {Kuala Lumpur},
           title = {Post-CMOS processing and DC characterization of a resonant microcantilever for gas sensing},
            year = {2012},
         journal = {ICIAS 2012 - 2012 4th International Conference on Intelligent and Advanced Systems: A Conference of World Engineering, Science and Technology Congress (ESTCON) - Conference Proceedings},
           pages = {820--824},
          author = {Mirza, A. and Hamid, N. H. and Khir, M. H. M. and Dennis, J. O. and Ashraf, K.},
            isbn = {9781457719677},
        keywords = {Biological sensors; CMOS; CMOS-MEMS; DC characteristics; DC characterization; Deep Reactive Ion Etching; Device sizes; Error limits; Etch process; Gas sensing; High aspect ratio; Manufacturing cost; Manufacturing tolerances; Metal-oxide; Micro devices; Micro-cantilevers; Monolithic integration; Pick-up coils; Piezoresistor; Post-CMOS; System size; Theoretical values, Aspect ratio; Biosensors; Carbon dioxide; Composite micromechanics; Gas sensing electrodes; MEMS; Monolithic integrated circuits; Resonators, Sensors},
             url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84867962342&doi=10.1109\%2fICIAS.2012.6306127&partnerID=40&md5=ed97267ff98bbe3b1781d514f679bcc5},
        abstract = {In recent years MEMS based microresonant sensors have been given a lot of attention due to their potential as a platform for the development of many novel physical, chemical, and biological sensors. Monolithic integration of micro device with electronics can not only lower manufacturing cost but also minimize total system size. However, the curling of composite metal-oxide microstructures in the thin-film CMOS-MEMS process, greatly limits the device size. Deep Reactive Ion Etching (DRIE) technologies have advanced significantly in recent years and by alternating passivation and etching cycle, silicon etch process can typically achieve high aspect ratios between 20:1 to 30:1 that can be used to reduce the curling of the structure. In this paper, post-CMOS processing of a microcantilever, designed for CO 2 detection, by using backside DRIE to control the curling and DC characterization of the sensor is reported. In order to estimate the deviation of the parameters from designed values, due to manufacturing tolerance, the DC characteristics of the sensor have also been calculated theoretically. The theoretical value of 1.65 k{\^I}{\copyright} for piezoresistor and 7.34 k{\^I}{\copyright} for pick up coil matches with the measured values of 2.15 k{\^I}{\copyright} and 6.3 k{\^I}{\copyright} within an error limit of 23 and 16 respectively. {\^A}{\copyright} 2011 IEEE.}
}