TY  - CONF
AV  - none
CY  - Ipoh, Perak
N1  - cited By 2; Conference of 2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2012 ; Conference Date: 6 November 2012 Through 8 November 2012; Conference Code:97509
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-84879853708&doi=10.1109%2fIEMT.2012.6521810&partnerID=40&md5=5fda0a8632a2cdf8ed70dc8066178aa0
A1  - Majid, M.F.M.A.
A1  - Khor, C.Y.
A1  - Abdullah, M.K.
A1  - Abdullah, M.Z.
A1  - Rahiman, W.Y.
A1  - Jappar, A.
A1  - Aris, M.S.
ID  - scholars2427
Y1  - 2012///
KW  - Arrhenius temperature; Epoxy molding compounds; Flip-chip packaging; Generalized Newtonian fluid; Numerical predictions; Underfill process; Viscosity models; Volume tracking method
KW  -  Electronics packaging; Filling; Industrial electronics; Manufacture
KW  -  Three dimensional
TI  - Three dimensional numerical prediction of epoxy flow during the underfill process in flip chip packaging
N2  - In the present paper, a 3D numerical prediction has been made to study the flip chip underfill process using the epoxy molding compound (EMC). The prediction considered the EMC filling behavior for the flow induced between the tiny gap of silicon die and substrate. Three different arrangements of the solder bump have been tested in this work. The EMC is treated as a generalized Newtonian fluid (GNF). The developed methodology combines the Kawamura and Kawahara technique, and the melt front volume tracking method to solve the two-phase flow field around the solder bumps. The Castro-Macosko rheology model with Arrhenius temperature dependence is adopted in the viscosity model. The predictions are made to investigate the filling patterns at several time intervals. The results show that the underfill process for solder bump with Type A gives minimum filling time and better filling yield. The effect of gap height between the plate and substrate on the underfill process also has been considered. The close agreement between prediction and experimental results from the previous work illustrates the applicability of the present numerical model. © 2012 IEEE.
SN  - 10898190
ER  -