eprintid: 2308
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/23/08
datestamp: 2023-11-09 15:50:31
lastmod: 2023-11-09 15:50:31
status_changed: 2023-11-09 15:42:28
type: article
metadata_visibility: show
creators_name: Rouhi, J.
creators_name: Mahmud, S.
creators_name: Hutagalung, S.D.
creators_name: Kakooei, S.
title: Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography
ispublished: pub
keywords: Fabrication; Scanning probe microscopy, Current-voltage measurements; Nano-oxidation; Nanogap electrodes; Silicon electrode; Silicon tips; Single-molecule transistor, Electrodes
note: cited By 35
abstract: In this study, a simple technique was introduced for the fab-ication of nanogap electrodes by using nano-oxidation scanning probe microscopy lithography with a Cr/Pt coated silicon tip. Silicon electrodes with a gap of sub-31 nm were fabricated successfully by this technique. The current-voltage measurements (I-V) of the electrodes demonstrated excellent insulating characteristics. This technique is simple, controllable, inexpensive, and faster than common methods. The results showed that silicon electrodes have a great potential for the fabrication of single molecule transistors, single electron transistors, and other nanoe ectronic devices. © 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).
date: 2011
publisher: SPIE
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860745763&doi=10.1117%2f1.3643480&partnerID=40&md5=360db307ef4fcbbbc72c5c734a1d438a
id_number: 10.1117/1.3643480
full_text_status: none
publication: Journal of Micro/Nanolithography, MEMS, and MOEMS
volume: 10
number: 4
refereed: TRUE
issn: 19325150
citation:   Rouhi, J. and Mahmud, S. and Hutagalung, S.D. and Kakooei, S.  (2011) Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography.  Journal of Micro/Nanolithography, MEMS, and MOEMS, 10 (4).   ISSN 19325150