%X In this study, a simple technique was introduced for the fab-ication of nanogap electrodes by using nano-oxidation scanning probe microscopy lithography with a Cr/Pt coated silicon tip. Silicon electrodes with a gap of sub-31 nm were fabricated successfully by this technique. The current-voltage measurements (I-V) of the electrodes demonstrated excellent insulating characteristics. This technique is simple, controllable, inexpensive, and faster than common methods. The results showed that silicon electrodes have a great potential for the fabrication of single molecule transistors, single electron transistors, and other nanoe ectronic devices. © 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).
%K Fabrication; Scanning probe microscopy, Current-voltage measurements; Nano-oxidation; Nanogap electrodes; Silicon electrode; Silicon tips; Single-molecule transistor, Electrodes
%O cited By 35
%J Journal of Micro/Nanolithography, MEMS, and MOEMS
%L scholars2308
%D 2011
%N 4
%R 10.1117/1.3643480
%T Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography
%V 10
%I SPIE
%A J. Rouhi
%A S. Mahmud
%A S.D. Hutagalung
%A S. Kakooei