TY  - JOUR
Y1  - 2011///
PB  - SPIE
SN  - 19325150
JF  - Journal of Micro/Nanolithography, MEMS, and MOEMS
A1  - Rouhi, J.
A1  - Mahmud, S.
A1  - Hutagalung, S.D.
A1  - Kakooei, S.
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860745763&doi=10.1117%2f1.3643480&partnerID=40&md5=360db307ef4fcbbbc72c5c734a1d438a
VL  - 10
AV  - none
N2  - In this study, a simple technique was introduced for the fab-ication of nanogap electrodes by using nano-oxidation scanning probe microscopy lithography with a Cr/Pt coated silicon tip. Silicon electrodes with a gap of sub-31 nm were fabricated successfully by this technique. The current-voltage measurements (I-V) of the electrodes demonstrated excellent insulating characteristics. This technique is simple, controllable, inexpensive, and faster than common methods. The results showed that silicon electrodes have a great potential for the fabrication of single molecule transistors, single electron transistors, and other nanoe ectronic devices. © 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).
N1  - cited By 35
IS  - 4
ID  - scholars2308
TI  - Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography
KW  - Fabrication; Scanning probe microscopy
KW  -  Current-voltage measurements; Nano-oxidation; Nanogap electrodes; Silicon electrode; Silicon tips; Single-molecule transistor
KW  -  Electrodes
ER  -