@article{scholars2308,
            year = {2011},
         journal = {Journal of Micro/Nanolithography, MEMS, and MOEMS},
       publisher = {SPIE},
             doi = {10.1117/1.3643480},
          number = {4},
            note = {cited By 35},
          volume = {10},
           title = {Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography},
            issn = {19325150},
          author = {Rouhi, J. and Mahmud, S. and Hutagalung, S. D. and Kakooei, S.},
        abstract = {In this study, a simple technique was introduced for the fab-ication of nanogap electrodes by using nano-oxidation scanning probe microscopy lithography with a Cr/Pt coated silicon tip. Silicon electrodes with a gap of sub-31 nm were fabricated successfully by this technique. The current-voltage measurements (I-V) of the electrodes demonstrated excellent insulating characteristics. This technique is simple, controllable, inexpensive, and faster than common methods. The results showed that silicon electrodes have a great potential for the fabrication of single molecule transistors, single electron transistors, and other nanoe ectronic devices. {\^A}{\copyright} 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).},
        keywords = {Fabrication; Scanning probe microscopy, Current-voltage measurements; Nano-oxidation; Nanogap electrodes; Silicon electrode; Silicon tips; Single-molecule transistor, Electrodes},
             url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860745763&doi=10.1117\%2f1.3643480&partnerID=40&md5=360db307ef4fcbbbc72c5c734a1d438a}
}